Flash NVROM devices with UV charge immunity

Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate

Reexamination Certificate

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Reexamination Certificate

active

06969654

ABSTRACT:
A method of preventing UV charging of flash NVROM cells during fabrication and a device thereby formed. During device fabrication, a UV blocking layer is deposited over the floating gates. The UV blocking layer substantially blocks UV from entering the gate regions so as to prevent electron mobility sufficient to render the cells unprogrammable or unerasable. The reduced electron migration during processing of the NVROM leads to increased yield and reliability of the devices.

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