Metal spacer gate for CMOS FET

Details Metal spacer gate for CMOS FET Metal spacer gate for CMOS FET

2005-06-21

2005-06-21

Thomas, Tom (Department: 2815)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S344000, C257S408000

Reexamination Certificate

active

06909145

ABSTRACT:
A method and structure for a metal oxide semiconductor transistor having a substrate, a well region in the substrate, source and drain regions on opposite sides of the well region in the substrate, a gate insulator over the well region of the substrate, a polysilicon gate conductor over the gate insulator, and metallic spacers on sides of the gate conductor.

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