Method of fabricating a flash memory device

Details Method of fabricating a flash memory device Method of fabricating a flash memory device

2005-08-23

2005-08-23

Vu, David (Department: 2818)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C257S390000

Reexamination Certificate

active

06933195

ABSTRACT:
A method of fabricating a flash memory device includes forming a device isolation layer at a predetermined region of a semiconductor substrate having a cell array region and a peripheral circuit region. The device isolation layer defines a first active region and a second active region in the cell array region and the peripheral circuit region, respectively. A gate conductive layer is formed on the entire surface of the semiconductor substrate having the device isolation layer. The gate conductive layer is patterned to form a floating gate pattern covering the first active region. At this time, the peripheral circuit region is still covered with the gate conductive layer. An inter-gate dielectric layer and a control gate conductive layer are formed on the entire surface of the substrate including the floating gate pattern. The control gate conductive layer and the inter-gate dielectric layer, which are located in the peripheral circuit region, are selectively removed to expose the gate conductive layer in the peripheral circuit region.

REFERENCES:
patent: 4163985 (1979-08-01), Schuermeyer et al.
patent: 4697330 (1987-10-01), Paterson et al.
patent: 5017979 (1991-05-01), Fujii et al.
patent: 5188976 (1993-02-01), Kume et al.
patent: 5200636 (1993-04-01), Uemura et al.
patent: 5243210 (1993-09-01), Naruke
patent: 5292681 (1994-03-01), Lee et al.
patent: 5656527 (1997-08-01), Choi et al.
patent: 5792696 (1998-08-01), Kim et al.
patent: 5943262 (1999-08-01), Choi
patent: 5976934 (1999-11-01), Hayakawa
patent: 6448112 (2002-09-01), Lee
patent: 2002/0008278 (2002-01-01), Mori

Affiliated with

Also associated with

Rating

Method of fabricating a flash memory device does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of fabricating a flash memory device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of fabricating a flash memory device will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3514890