Displacement method to grow cu overburden

Details Displacement method to grow cu overburden Displacement method to grow cu overburden

2005-06-07

2005-06-07

Smith, Matthew (Department: 2825)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S625000, C438S633000, C438S637000

Reexamination Certificate

active

06903011

ABSTRACT:
A damascene-formed conductive region having a recess formed at the top surface thereof by a chemical-mechanical polish (CMP) process is repaired or regrown using a displacement method. A displacement material is deposited over the recessed conductive material. The displacement material is removed from a top surface of the insulating layer surrounding the damascene conductive region, and the semiconductor device is placed in a solution. The displacement material reacts with the solution, and copper in the solution is grown as a result of the displacement over the recess of the conductive region. The displacement method results in reducing or eliminating the recess formed by the CMP process.

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