Method of defining forbidden pitches for a lithography...

Computer-aided design and analysis of circuits and semiconductor – Nanotechnology related integrated circuit design

Reexamination Certificate

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C716S030000

Reexamination Certificate

active

06973636

ABSTRACT:
A method of identifying and defining forbidden pitches or forbidden pitch ranges for a lithographic exposure tool under a given set of exposure conditions is provided. In the method, a computer simulation is performed, and its results are compared to frequently used pitches to see if such frequently used pitches may yield depth-of-focus (DOF) values greater than the focus budget for the exposure tool. If so, a verification test is performed by using a test mask and actually exposing a surface with the same pattern pitches simulated. From this, actual DOF values are obtained and compared to the focus budget of the exposure tool. Any pitches having a DOF value greater than the focus budget are designated as forbidden pitches. This forbidden pitch information may be integrated into a design rule to restrict the use of such forbidden pitches under the given exposure conditions where they are likely to arise.

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patent: 6094305 (2000-07-01), Shiraishi
patent: 6519760 (2003-02-01), Shi et al.
patent: 6584609 (2003-06-01), Pierrat et al.
patent: 6871337 (2005-03-01), Socha
patent: 2002/0152452 (2002-10-01), Socha

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