Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2005-10-25
2005-10-25
Thompson, Craig A. (Department: 2813)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
Reexamination Certificate
active
06958267
ABSTRACT:
The invention includes a capacitor construction. A capacitor electrode has a perovskite-type dielectric material thereover. The perovskite-type dielectric material has an edge region proximate the electrode, and a portion further from the electrode than the edge region. The portion has a different amount of crystallinity than the edge region. The invention also includes a method of forming a capacitor construction. A capacitor electrode is provided, and a perovskite-type dielectric material is chemical vapor deposited over the first capacitor electrode. The depositing includes flowing at least one metal organic precursor into a reaction chamber and forming a component of the perovskite-type dielectric material from the precursor. The precursor is exposed to different oxidizing conditions during formation of the perovskite-type dielectric material so that a first region of the dielectric material has more amorphous character than a second region of the dielectric material.
REFERENCES:
patent: 4105810 (1978-08-01), Yamazaki et al.
patent: 4261698 (1981-04-01), Carr et al.
patent: 4691662 (1987-09-01), Roppel et al.
patent: 5006363 (1991-04-01), Fujii et al.
patent: 5164363 (1992-11-01), Eguchi et al.
patent: 5183510 (1993-02-01), Kimura
patent: 5254505 (1993-10-01), Kamiyama
patent: 5256455 (1993-10-01), Numasawa
patent: 5261961 (1993-11-01), Takasu et al.
patent: 5270241 (1993-12-01), Dennison et al.
patent: 5312783 (1994-05-01), Takasaki et al.
patent: 5392189 (1995-02-01), Fazan et al.
patent: 5395771 (1995-03-01), Nakato
patent: 5459635 (1995-10-01), Tomozawa et al.
patent: 5468687 (1995-11-01), Carl et al.
patent: 5470398 (1995-11-01), Shibuya et al.
patent: 5525156 (1996-06-01), Manada et al.
patent: 5596214 (1997-01-01), Endo
patent: 5614018 (1997-03-01), Azuma et al.
patent: 5618761 (1997-04-01), Eguchi et al.
patent: 5635741 (1997-06-01), Tsu et al.
patent: 5656329 (1997-08-01), Hampden-Smith
patent: 5663089 (1997-09-01), Tomozawa et al.
patent: 5702562 (1997-12-01), Wakahara
patent: 5711816 (1998-01-01), Kirlin et al.
patent: 5719417 (1998-02-01), Roeder et al.
patent: 5723361 (1998-03-01), Azuma et al.
patent: 5731948 (1998-03-01), Yializis et al.
patent: 5736759 (1998-04-01), Haushalter
patent: 5776254 (1998-07-01), Yuuki et al.
patent: 5783253 (1998-07-01), Roh
patent: 5798903 (1998-08-01), Dhote et al.
patent: 5834060 (1998-11-01), Kawahara et al.
patent: 5909043 (1999-06-01), Summerfelt
patent: 5972430 (1999-10-01), DiMeo, Jr. et al.
patent: 5976990 (1999-11-01), Mercaldi et al.
patent: 5989927 (1999-11-01), Yamanobe
patent: 6025222 (2000-02-01), Kimura et al.
patent: 6037205 (2000-03-01), Huh et al.
patent: 6043526 (2000-03-01), Ochiai
patent: 6046345 (2000-04-01), Kadokura et al.
patent: 6078492 (2000-06-01), Huang et al.
patent: 6090443 (2000-07-01), Eastep
patent: 6101085 (2000-08-01), Kawahara et al.
patent: 6126753 (2000-10-01), Shinriki et al.
patent: 6127218 (2000-10-01), Kang
patent: 6143597 (2000-11-01), Matsuda et al.
patent: 6143679 (2000-11-01), Nagasawa
patent: 6146907 (2000-11-01), Xiang et al.
patent: 6150684 (2000-11-01), Sone
patent: 6153898 (2000-11-01), Watanabe et al.
patent: 6156638 (2000-12-01), Agarwal et al.
patent: 6165834 (2000-12-01), Agarwal et al.
patent: 6211096 (2001-04-01), Allman
patent: 6215650 (2001-04-01), Gnade et al.
patent: 6236076 (2001-05-01), Arita et al.
patent: 6238734 (2001-05-01), Senzaki et al.
patent: 6245652 (2001-06-01), Gardner et al.
patent: 6258170 (2001-07-01), Somekh
patent: 6258654 (2001-07-01), Gocho
patent: 6277436 (2001-08-01), Stauf et al.
patent: 6285051 (2001-09-01), Ueda et al.
patent: 6287935 (2001-09-01), Coursey
patent: 6323057 (2001-11-01), Sone
patent: 6325017 (2001-12-01), DeBoer et al.
patent: 6335049 (2002-01-01), Basceri
patent: 6335302 (2002-01-01), Satoh
patent: 6337496 (2002-01-01), Jung
patent: 6338970 (2002-01-01), Suh
patent: 6362068 (2002-03-01), Summerfelt et al.
patent: 6372686 (2002-04-01), Golden
patent: 6422281 (2002-07-01), Ensign, Jr. et al.
patent: 6500487 (2002-12-01), Holst et al.
patent: 6507060 (2003-01-01), Ren et al.
patent: 6527028 (2003-03-01), Miller
patent: 6566147 (2003-05-01), Basceri et al.
patent: 6602376 (2003-08-01), Bradshaw
patent: 2002/0197793 (2002-12-01), Dornfest et al.
patent: 2003/0017266 (2003-01-01), Basceri et al.
patent: 0 030 798 (1981-06-01), None
patent: 0 306 069 (1989-03-01), None
patent: 0 388 957 (1990-09-01), None
patent: 0 474 140 (1991-08-01), None
patent: 0 474 140 (1992-03-01), None
patent: 0 810 666 (1997-12-01), None
patent: 0 835 950 (1998-04-01), None
patent: 0 855 735 (1998-07-01), None
patent: 0 892 426 (1999-01-01), None
patent: 0 957 522 (1999-11-01), None
patent: 2 194 555 (1988-03-01), None
patent: 04-24922 (1922-01-01), None
patent: 04-180566 (1922-06-01), None
patent: 2250970 (1990-10-01), None
patent: 04-115535 (1992-04-01), None
patent: 08-060347 (1996-03-01), None
patent: 2000091333 (2000-03-01), None
patent: WO 98/39497 (1998-11-01), None
patent: WO 99/64645 (1999-12-01), None
patent: WO 01/16395 (2001-03-01), None
Steve Bilodeau et al.,Composition Dependence of the Dielectric Properties of MOCVDBaSrT-3TiO3, pp. 1-21 (MRS Fall Meeting Dec. 1, 1994).
Steve M. Bilodeau et al.,MOCVD BST for High Density DRAM Applications(Preprint for Semicon/West Jul. 12, 1995), 2 pages.
Y-C Choi et al., Abstract,Improvements of the Properties of Chemical-Vapor-Deposited(Ba,Sr)TiO3Films Through Use of a Seed Layer, 36 Jpn. Appl. Phys. Pt. 1, No. 11, pp. 6824-6828 (1997).
Chung Ming Chu et al., Abstract,Electrical properties and crystal structure of (Ba,Sr)TiO3films prepared at low temperatures on a LaNiO3electrode by radio-frequency magnetron . . ., 70 Applied Physics Letters No. 2, pp. 249-251 (1997).
Kazuhiro Eguchi et al., Abstract,Chemical vapor deposition of(Ba,Sr)TiO3thin films for application in gigabit scale dynamic random access memories, 14 Integrated Ferroelectrics Nos. 1-4, Pt. 1, pp. 33-42 (1997).
Q.X. Jia et al., Abstract,Structural and dielectric properties of Baa5Sr3thin films with an epi-RuO2bottom electrode, 19 Integrated Ferroelectrics Nos. 1-4, pp. 111-119 (1998).
Takaaki Kawahara et al., (Ba, Sr)TiO3Films Prepared by Liquid Source Chemical Vapor Deposition on Ru Electrodes, 35 Jpn. J. Appl. Phys. Pt. 1, No. 9B, pp. 4880, 4883 (1996).
Rajesh Khamankar et al.,A Novel Low-Temperature Process for High Dielectric Constants BST Thin Films for ULSI DRAM Applications, Microelectronics Research Center, Univ. of Texas at Austin, TX (Undated), 2 pages.
Yong Tae Kim et al., Abstract,Advantages of RuO3bottom electrode in the dielectric and leakage characteristics of(Ba,Sr)TiO3capacitor, 35 Jpn. J. Appl. Phys. Pt. 1, No. 12A, pp. 6153-6156 (1996).
S.H. Paek et al., Abstract,Characterization of MIS capacitor of BST thin films deposited on Si by RF magnetron sputtering, Ferroelectric Thin Films V. Symposium, San Francisco, CA, pp. 33-38 (Apr. 7, 1995).
N. Takeuchi et al., Abstract,Effect of firing atmosphere on the cubic-hexagonal transition in Baa09Sra2TiO3, 98 Nippon Seramikkusu Kyokai Gakujutsu Ronbunshi No. 8, pp. 836-839 (1990).
H. Yamaguchi, et al., Abstract,Reactive coevaporation synthesis and characterization of SrTiO3-BaTiO3thin films, IEEE International Symposium on Applications of Ferroelectrics, Greenville, SC, pp. 285-288 (Aug. 2, 1992).
S. Yamamichi et al., Abstract,Ba + Sr/Ti ratio dependence of the dielectric properties for(Baa5)Sra5TiO3thin films prepared by ion beam sputtering, 64 Applied Physics Letters No. 13, pp. 1644-1646 (1994).
M. Yamamuka et al., Abstract,Thermal-Desorption Spectroscopy of(Ba,Sr)TiO3Thin-Films Prepared by Chemical-Vapor-Deposition, 35 Jpn. J. of Appl. Phys. Pt. 1, No. 2A, pp. 729-735 (1996).
Arai T., et al.: “Preparation of SrTiO3Films on 8-Inch Wafers . . . ” Jap. Journal of Applied Physics. vol. 35, No. 9B, Part 01, Sep. 1, 1996, pp. 4875-4879.
U.S. Appl. No. 09/388,063, filed Aug. 30, 1999, Agarwal et al.
U.S. Appl. No. 09/476,516, filed Jan. 3, 2000, Basceri.
U.S. Appl. No. 09/580,733, filed May 26, 2000, Basceri.
U.S. Appl. No. 09/905,286, filed Jan. 13, 2001, Basceri et al.
U
Micro)n Technology, Inc.
Thompson Craig A.
Wells St. John P.S.
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