Method of forming a source/drain and a transistor employing...

Details Method of forming a source/drain and a transistor employing... Method of forming a source/drain and a transistor employing...

2005-03-29

2005-03-29

Niebling, John F. (Department: 2812)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S300000, C438S302000

Reexamination Certificate

active

06872626

ABSTRACT:
A method of forming a source/drain having a reduced junction capacitance and a transistor employing the same. In one embodiment, the method of forming the source/drain includes forming a recess in a substrate adjacent a gate of the transistor and forming a deep doped region below a bottom surface of the recess. The method also includes epitaxially growing a semiconductor material within the recess and forming a lightly doped drain region adjacent the gate.

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