Semiconductor device and method of manufacturing the same

Details Semiconductor device and method of manufacturing the same Semiconductor device and method of manufacturing the same

2005-09-13

2005-09-13

Fourson, George (Department: 2823)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S287000, C438S592000, C438S591000

Reexamination Certificate

active

06943076

ABSTRACT:
Gate insulation films each containing titanium oxide as a primary constituent material are formed on one major surface of a semiconductor substrate. Gate electrode films are formed in contact with the gate insulation films. The gate electrode films contain ruthenium oxide or alternatively iridium oxide as a primary constituent material. In order to prevent electrically conductive elements from diffusing into titanium oxide of the gate insulation films, ruthenium oxide or iridium oxide is effectively used as a primary constituent material of the gate electrodes. A semiconductor device can be realized in which occurrence of a leak current is suppressed by increasing a physical film thickness while sustaining desired dielectric characteristic.

REFERENCES:
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patent: 2000-14388 (2000-03-01), None
Kohji Matsuo, et al., “Reliable High-k TiO2Gate Insulator Formed by Ultrathin TiN Deposition and Low Temperature Oxidation,”1999 International Conference on Solid State Devices and Materials, pp. 164-165.
Benito deCelis, et al., “Molecular Dynamics Simulation of Crack Tip Processes in Alpha-iron and Copper,”J. Appl. Phys.(Sep. 1983), 54(9):4864-78.
Thomas Kwok, et al., “Molecular-dynamics Studies of Grain-boundary Diffusion,”Physical Review B(May 15, 1984), 29:5363-71.
S.A. Campbell, et al., “Titanium Dioxide (TiO2)-based Gate Insulators,”IBM J. Res. Develop. (May 1999). 43(3):383-91.

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