Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2005-09-27
2005-09-27
Wille, Douglas A. (Department: 2814)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C438S239000
Reexamination Certificate
active
06949429
ABSTRACT:
A semiconductor memory device and a method for manufacturing the same are provided. The semiconductor memory device includes an oxide layer for isolating individual devices which define device areas so that a cell area and a peripheral circuit area are separated from each other on a semiconductor substrate, a plurality of MOS transistors, which are comprised of source areas, drain areas, and gates that are formed in the cell area and the peripheral circuit area, a bit line, which is formed on the plurality of MOS transistors and is electrically connected to the MOS transistor, a stack-shaped capacitor, which is comprised of a first electrode, a dielectric layer, and a second electrode between which the MOS transistors and the bit line in the cell area is interposed, a guard-ring pattern, which are interposed between the cell area and the peripheral circuit area, surrounds the cell area and is apart from the peripheral circuit area, and a contact fill for plate electrode, which is formed in the guard-ring pattern and is in contact with the second electrode that is formed on the internal sidewall and the bottom of the guard-ring pattern. The guard-ring pattern is formed in a boundary between the cell area and the peripheral circuit area while surrounding the cell area, and thereby step caused by manufacture of the stack-shaped capacitor are removed during a manufacturing process, and the contact fill for plate electrode is formed in the guard-ring pattern, and thereby the ground resistance of the capacitor is reduced, and the electrical characteristics of the memory device are improved.
REFERENCES:
patent: 6562679 (2003-05-01), Lee et al.
Kim Ki-Nam
Park Byung-Jun
Samsung Electronics Co,. Ltd.
Volentine Francos & Whitt PLLC
Wille Douglas A.
LandOfFree
Semiconductor memory device and method for manufacturing the... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Semiconductor memory device and method for manufacturing the..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor memory device and method for manufacturing the... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3447396