Method of manufacturing and structure of semiconductor...

Details Method of manufacturing and structure of semiconductor... Method of manufacturing and structure of semiconductor...

2005-04-26

2005-04-26

Whitehead, Jr., Carl (Department: 2813)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S298000

Reexamination Certificate

active

06884686

ABSTRACT:
A high voltage semiconductor device includes a drain region disposed within a semiconductor substrate. The semiconductor device further includes a field oxide layer disposed outwardly from the drain region of the semiconductor substrate. The semiconductor device also includes a floating ring structure disposed inwardly from at least a portion of the field oxide layer. In one particular embodiment, a device parameter degradation associated with the semiconductor device comprises one (1) percent or less after approximately five hundred (500) seconds of accelerated lifetime operation.

REFERENCES:
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patent: 6222235 (2001-04-01), Kojima et al.
patent: 6448625 (2002-09-01), Hossain et al.
patent: 20020098637 (2002-07-01), Hossain et al.
patent: 20030001216 (2003-01-01), de Fresart et al.
patent: 20030190789 (2003-10-01), Salama et al.

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