Semiconductor device manufacturing: process – Making device or circuit responsive to nonelectrical signal
Reexamination Certificate
2005-09-06
2005-09-06
Nelms, David (Department: 2818)
Semiconductor device manufacturing: process
Making device or circuit responsive to nonelectrical signal
C257S082000
Reexamination Certificate
active
06939733
ABSTRACT:
A first group III nitride compound layer, which is formed on a substrate by a method not using metal organic compounds as raw materials, is heated in an atmosphere of a mixture gas containing a hydrogen or nitrogen gas and an ammonia gas, so that the crystallinity of a second group III nitride compound semiconductor layer formed on the first group III nitride compound layer is improved. When the first group III nitride compound layer is formed on a substrate by a sputtering method, the thickness of the first group III nitride compound layer is set to be in a range of from 50 Å to 3000 Å.
REFERENCES:
patent: 4153905 (1979-05-01), Charmakadze et al.
patent: 4855249 (1989-08-01), Akasaki et al.
patent: 5122845 (1992-06-01), Manabe et al.
patent: 5237182 (1993-08-01), Kitagawa et al.
patent: 5278433 (1994-01-01), Manabe et al.
patent: 5592501 (1997-01-01), Edmond et al.
patent: 5633192 (1997-05-01), Moustakas et al.
patent: 5834326 (1998-11-01), Miyachi et al.
patent: 5909036 (1999-06-01), Tanaka et al.
patent: 6307219 (2001-10-01), Oku et al.
patent: 6501154 (2002-12-01), Morita et al.
patent: 60-173829 (1985-09-01), None
patent: 02-081482 (1990-03-01), None
patent: 05-063236 (1993-03-01), None
patent: 05-86646 (1993-12-01), None
Uchida, et al., “Characterization of Nitridated Layers and Their Effect on the Growth and Quality of GaN”, Solid-State Electronics, vol. 41, No. 2, (1997), pp. 135-139.
Patent Abstracts of Japan 60-173829 dated Sep. 7, 1985.
Chinese Office Action dated May 9, 2003 with translation.
Japanese Office Action dated Dec. 14, 2004 with English translation.
Heon Lee, et al. Growth of Thick GaN Films on RF Sputtered AIN Buffer Layer by Hydride Vapor Phase Epitaxy, Journal of Electric Materials, vol. 26, No. 8 (1997) pp. 898-902.
Asami Shinya
Asami Shizuyo
Chiyo Toshiaki
Senda Masanobu
Watanabe Hiroshi
LandOfFree
Group III nitride compound semiconductor device and method... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Group III nitride compound semiconductor device and method..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Group III nitride compound semiconductor device and method... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3430090