Method of forming a contact hole of a semiconductor device

Details Method of forming a contact hole of a semiconductor device Method of forming a contact hole of a semiconductor device

2005-01-04

2005-01-04

Lee, Hsien-Ming (Department: 2823)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S303000, C438S595000, C438S639000

Reexamination Certificate

active

06838330

ABSTRACT:
A method of forming a contact hole of a semiconductor device that is able to prevent excessive etching of an interlayer dielectric pattern includes forming a gate pattern including a first insulation layer pattern, a conductive layer pattern, a capping insulation layer pattern, and a second insulation layer pattern on a substrate; forming a spacer using an insulating material on a sidewall of the gate pattern; forming an interlayer dielectric on the substrate on which the gate pattern and the spacer are formed; forming a contact hole and an interlayer dielectric pattern for exposing the substrate by etching the interlayer dielectric; forming a liner spacer on a sidewall of the spacer and the interlayer dielectric pattern; and cleaning the resultant structure using a cleaning solution. The cleaning solution preferably includes includes ozone water and hydrogen fluoride (HF).

REFERENCES:
patent: 6039815 (2000-03-01), Yeol et al.
patent: 6083828 (2000-07-01), Lin et al.
patent: 6322954 (2001-11-01), Li
patent: 2002-15168 (2002-02-01), None

Affiliated with

Also associated with

Rating

Method of forming a contact hole of a semiconductor device does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of forming a contact hole of a semiconductor device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of forming a contact hole of a semiconductor device will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3419652