Methods of forming rugged silicon-containing surfaces

Details Methods of forming rugged silicon-containing surfaces Methods of forming rugged silicon-containing surfaces

2005-05-03

2005-05-03

Fourson, George (Department: 2823)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S260000, C438S398000, C438S964000

Reexamination Certificate

active

06887755

ABSTRACT:
The invention encompasses a method of forming a rugged silicone-containing surface. A layer comprising amorphous silicon is provided within a reaction chamber at a first temperature. The temperature is increased to a second temperature at least 40° C. higher than the first temperature while flowing at least one hydrogen isotope into the chamber. After the temperature reaches the second temperature, the layer is seeded with seed crystals. The seeded layer is then annealed to form a rugged silicon-containing surface. The rugged silicon-containing surface can be incorporated into a capacitor construction. The capacitor construction can be incorporated into a DRAM cell, and the DRAM cell can be utilized in an electronic system.

REFERENCES:
patent: 5910019 (1999-06-01), Watanabe et al.
patent: 6025280 (2000-02-01), Brady et al.
patent: 6281138 (2001-08-01), Brady et al.

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