Semiconductor device manufacturing: process – Coating of substrate containing semiconductor region or of... – Insulative material deposited upon semiconductive substrate
Reexamination Certificate
2005-07-05
2005-07-05
Wilczewski, M. (Department: 2822)
Semiconductor device manufacturing: process
Coating of substrate containing semiconductor region or of...
Insulative material deposited upon semiconductive substrate
C438S783000, C438S786000, C438S789000, C438S790000, C438S798000, C427S489000, C427S535000, C427S536000
Reexamination Certificate
active
06914014
ABSTRACT:
A method for depositing a low dielectric constant film on a substrate. The method includes depositing a low dielectric constant film comprising silicon, carbon, oxygen and hydrogen on the substrate disposed in a chemical vapor deposition chamber, introducing a gas mixture comprising a hydrogen-containing gas to the chemical vapor deposition chamber, forming a plasma of the gas mixture proximate the low dielectric constant film using a radio frequency power, and applying a direct current bias to at least one of the substrate or a gas distribution plate to cure the low dielectric constant film.
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Huang Tzu-Fang
Li Lihua
Rocha-Alvarez Juan Carlos
Xia Li-Qun
Zhao Maosheng
Applied Materials Inc.
Moser Patterson & Sheridan
Wilczewski M.
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