Methods for manufacturing integrated circuit devices...

Details Methods for manufacturing integrated circuit devices... Methods for manufacturing integrated circuit devices...

2005-04-05

2005-04-05

Lee, Eddie (Department: 2811)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S315000, C438S361000, C257S510000, C257S506000, C257S397000, C257S514000, C257S515000, C257S374000

Reexamination Certificate

active

06875649

ABSTRACT:
Integrated circuit devices including an isolation region are provided. The devices include an integrated circuit substrate and a trench in the integrated circuit substrate that defines an active region of the integrated circuit device. A silicon layer is provided on the integrated circuit substrate that extends over an edge of the trench and along an upper portion of a first sidewall of the trench. An insulating material is positioned adjacent the silicon layer that extends across some, or all, of the trench to define the isolation region. Methods of forming such integrated circuit devices are also provided.

REFERENCES:
patent: 5747866 (1998-05-01), Ho et al.
patent: 5963822 (1999-10-01), Saihara et al.
patent: 6064104 (2000-05-01), Omid-Zohoor et al.
patent: 6232646 (2001-05-01), Sun et al.
patent: 6613645 (2003-09-01), Fukaura
patent: 99-017696 (1999-03-01), None
Notice to Submit Response for corresponding Korean Application No. 10-2001-0042355 dated May 29, 2003 (English Translation).

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