Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2005-09-06
2005-09-06
Whitehead, Jr., Carl (Department: 2813)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C438S202000, C438S205000, C438S657000
Reexamination Certificate
active
06939769
ABSTRACT:
The present invention provides a method for manufacturing a semiconductor device capable of acquiring productivity when a p-type source/drain is formed by the implantation of a BF2and B ions. The method for manufacturing a semiconductor device includes the steps of: implanting a BF2ion in a p-type source/drain region on a silicon substrate with an ion implantation energy of from about 10 keV to about 20 keV; implanting B ion in the p-type source/drain region with an ion implantation energy of from about 5 keV to about 10 keV; and forming a p-type source/drain by carrying out a thermal treatment.
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patent: 1999-57331 (1999-07-01), None
Parab et al., “Detailed analysis and computaitnally efficient modeling of ultra shallow as implanted rofiles obtained by low energy BBF2, and As ion implantation”, IEEE, pp. 559-562, 1997.
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Parab et al., “Detailed Analysis and Computationally Efficient Modeling of Ultra Shallow Dopant Profiles Obtained by Low Energy B/BF2 and As Ion Implantation”, IEEE, 1997, pp. 559-562.
Notice of Preliminary Rejection from the Korean Intellectual Property Office dated May 26, 2003, 2 pages, with English translation (1 page).
English abstract for KR 1999-57331, 1 page.
Finnegan Henderson Farabow Garrett & Dunner L.L.P.
Huynh Yennhu B.
Hynix / Semiconductor Inc.
Jr. Carl Whitehead
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