Methods of forming integrated circuits with thermal oxide...

Details Methods of forming integrated circuits with thermal oxide... Methods of forming integrated circuits with thermal oxide...

2005-05-10

2005-05-10

Niebling, John F. (Department: 2812)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S311000, C438S664000, C438S682000, C438S592000, C257S408000

Reexamination Certificate

active

06890823

ABSTRACT:
Methods of forming thermal oxide layers on a side wall of gate electrodes are disclosed. In particular, thermal oxide layers can be formed on a side wall of a gate electrode by forming a gate electrode on an integrated circuit substrate and forming a thermal oxide layer on a side wall of the gate electrode using a thermal oxidation process. A silicide layer can be formed on the gate electrode after the formation of the thermal oxide layer.

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patent: 6413829 (2002-07-01), Yu
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