Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2005-05-10
2005-05-10
Thompson, Craig A. (Department: 2813)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
Reexamination Certificate
active
06890807
ABSTRACT:
A method for making a semiconductor device is described. That method comprises forming a dielectric layer on a substrate, and forming an impurity containing metal layer on the dielectric layer. A metal gate electrode is then formed from the impurity containing metal layer. Also described is a semiconductor device that comprises a metal gate electrode that is formed on a dielectric layer, which is formed on a substrate. The metal gate electrode includes a sufficient amount of an impurity to shift the workfunction of the metal gate electrode by at least about 0.1 eV.
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Chau Robert
Doczy Mark
Kuhn Markus
Seeley Mark V.
Thompson Craig A.
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