Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2005-09-06
2005-09-06
Smoot, Stephen W. (Department: 2813)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C438S396000, C438S398000, C438S785000
Reexamination Certificate
active
06939760
ABSTRACT:
There is provided a method for manufacturing a semiconductor device including a capacitor having a lower electrode, an upper electrode and a capacitive insulating film between the lower electrode and the upper electrode on a semiconductor substrate, wherein the capacitive insulating film is formed on the lower electrode over the semiconductor substrate using a chemical vapor deposition method, the method including: a lower electrode forming step of forming the lower electrode on the semiconductor, a dual-stage deposition step including a first stage for introducing a material gas containing a specified metal into a reactor in which the semiconductor substrate is placed and a second stage for subsequently introducing an oxidizing gas into the reactor, and wherein a metal oxide film as an oxide of the specified metal is formed on the lower electrode over the semiconductor substrate, by repeating the dual-stage deposition step two or more times, thereby forming the capacitive insulating film; and an upper electrode forming step of forming the upper electrode on the capacitive insulating film. Thus, it is possible to obtain the capacitive insulating film having good step coverage and a good film quality, without reducing throughput.
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Taiwanese Office Action Pertaining to Application TW 92117941 Filed on Jul. 1, 2003.
Fujioka Hirofumi
Kitamura Hiroyuki
Koyanagi Kenichi
Elpida Memory Inc.
Smoot Stephen W.
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