Method of processing a wafer within a reaction chamber

Details Method of processing a wafer within a reaction chamber Method of processing a wafer within a reaction chamber

1996-10-24

1999-02-23

Breneman, R. Bruce

Semiconductor device manufacturing: process

Chemical etching

Vapor phase etching

216 67, 216 68, H04L 2100

Patent

active

058743618

ABSTRACT:
A method of dechucking a workpiece from an electrostatic chuck. The method adaptively produces a dechucking voltage for canceling any unpredictable residual electrostatic fields between a workpiece and the electrostatic chuck. The method contains the steps of (a) applying a lifting force to the workpiece; (b) altering the chucking voltage; (c) measuring the lifting force; (d) comparing the measured lifting force to a threshold level; and, depending on the result of the comparison, either (e) maintaining the chucking voltage at its present level for a predefined period of time and physically dechucking the workpiece or (f) repeating steps (b), (c), (d) and (e).

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patent: 5221450 (1993-06-01), Hattori et al.
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patent: 5459632 (1995-10-01), Birarg et al.
patent: 5583737 (1996-12-01), Collins et al.
patent: 5707692 (1998-01-01), Suzuki

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