Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2008-03-25
2008-03-25
Soward, Ida M. (Department: 2822)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S329000, C257S330000, C257S331000, C257S332000, C257S333000, C257S334000, C257S335000, C257S397000
Reexamination Certificate
active
07348628
ABSTRACT:
Vertical channel semiconductor devices include a semiconductor substrate with a pillar having an upper surface. An insulated gate electrode is around a periphery of the pillar. The insulated gate electrode has an upper surface at a vertical level lower than the upper surface of the pillar to vertically space apart the insulated gate electrode from the upper surface of the pillar. A first source/drain region is in the substrate adjacent the pillar. A second source/drain region is disposed in an upper region of the pillar including the upper surface of the pillar. A contact pad contacts the entire upper surface of the pillar to electrically connect to the second source/drain region.
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Kim Seong-Goo
Lee Choong-ho
Lee Won-sok
Park Dong-gun
Park Seung-bae
Myers Bigel & Sibley & Sajovec
Samsung Electronics Co,. Ltd.
Soward Ida M.
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