Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2008-04-08
2008-04-08
Vu, David (Department: 2818)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C257SE21625
Reexamination Certificate
active
07354830
ABSTRACT:
A method of fabricating an integrated circuit is provided. A first gate dielectric portion is formed on a substrate in a first transistor region. The first gate dielectric portion includes a first high-permittivity dielectric material. The first gate dielectric portion has a first equivalent silicon oxide thickness. A second gate dielectric portion is formed on the substrate in a second transistor region. The second gate dielectric portion includes the first high-permittivity dielectric material. The second gate dielectric portion has a second equivalent silicon oxide thickness. The second equivalent silicon oxide thickness is different than the first equivalent silicon oxide thickness.
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Chen Shang-Chih
Hu Chenming
Lee Wen-Chin
Lin Chun-Chieh
Wang Chih-Hao
Slater & Matsil L.L.P.
Taiwan Semiconductor Manufacturing Company , Ltd.
Vu David
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