Integrated circuit devices including an L-shaped depletion...

Details Integrated circuit devices including an L-shaped depletion... Integrated circuit devices including an L-shaped depletion...

2008-07-08

2008-07-08

Le, Thao P. (Department: 2818)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C257SE21444, C438S183000

Reexamination Certificate

active

07396730

ABSTRACT:
Integrated circuit devices include an integrated circuit substrate having a channel region therein. A gate pattern is disposed on a top surface of the channel region. A depletion barrier layer covers a surface of the integrated circuit substrate adjacent opposite sides of the gate pattern and extending along a portion of a lateral face of the channel region. A source/drain layer is disposed on the depletion barrier layer and electrically contacting the lateral face of the channel region in a region not covered by the depletion barrier layer. The channel region may protrude from a surface of the substrate. The depletion barrier layer may be an L-shaped depletion barrier layer and the device may further include a device isolation layer disposed at a predetermined portion of the substrate through the source/drain layer and the depletion barrier layer. The depletion barrier layer and the device isolation layer may be formed of the same material.

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