Semiconductor device manufacturing: process – Coating of substrate containing semiconductor region or of...
Reexamination Certificate
2011-08-02
2011-08-02
Pham, Thanh V (Department: 2894)
Semiconductor device manufacturing: process
Coating of substrate containing semiconductor region or of...
C438S584000, C438S691000, C438S692000, C438S763000, C438S764000, C438S778000
Reexamination Certificate
active
07989358
ABSTRACT:
A method of preventing the formation of cracks on the backside of a silicon (Si) semiconductor chip or wafer during the processing thereof. Also provided is a method for inhibiting the propagation of cracks, which have already formed in the backside of a silicon chip during the processing thereof and prior to the joining thereto of a substrate during the fabrication of an electronic package. The methods entail either treating the backside with a wet etch, or alternatively, applying a protective film layer thereon prior to forming an electronic package incorporating the chip or wafer.
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Daubenspeck Timothy H.
Gambino Jeffrey P.
Lasky Jerome B.
Muzzy Christopher D.
Sauter Wolfgang
International Business Machines - Corporation
Kotulak, Esq. Richard M.
Pham Thanh V
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