Process of forming an electronic device including a trench...

Details Process of forming an electronic device including a trench... Process of forming an electronic device including a trench...

2011-03-08

2011-03-08

Arora, Ajay K (Department: 2892)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S227000, C438S268000, C257S328000, C257S339000, C257SE29021

Reexamination Certificate

active

07902017

ABSTRACT:
A process of forming an electronic device can include providing a workpiece comprising a substrate, including an underlying doped region, and a semiconductor layer overlying the underlying doped region, wherein the semiconductor layer has a primary surface spaced apart from the underlying doped region. The process can also include forming a vertically-oriented conductive region extending from the primary surface to the underlying doped region, and forming a horizontally-oriented doped region adjacent to the primary surface. In a finished form of the electronic device, the horizontally-oriented doped region extends further in a lateral direction toward a region where a source region has been or will be formed, as compared to the vertically-oriented conductive region. The electronic device includes a transistor that includes the underlying doped region, the vertically-oriented conductive region, and the horizontally-oriented doped region.

REFERENCES:
patent: 7126193 (2006-10-01), Baiocchi et al.
patent: 7176524 (2007-02-01), Loechelt et al.
patent: 7235845 (2007-06-01), Xu et al.
patent: 7253477 (2007-08-01), Loechelt et al.
patent: 7276747 (2007-10-01), Loechelt et al.
patent: 7282765 (2007-10-01), Xu et al.
patent: 7285823 (2007-10-01), Loechelt et al.
patent: 7397084 (2008-07-01), Loechelt et al.
patent: 7411266 (2008-08-01), Tu et al.
patent: 7446354 (2008-11-01), Loechelt et al.
patent: 7482220 (2009-01-01), Loechelt et al.
patent: 7679146 (2010-03-01), Tu et al.
patent: 2005/0110065 (2005-05-01), Uchiyama et al.
patent: 2006/0180947 (2006-08-01), Loechelt et al.
patent: 2006/0226451 (2006-10-01), Davies
patent: 2006/0226498 (2006-10-01), Davies
patent: 2007/0057289 (2007-03-01), Davies
patent: 2007/0215914 (2007-09-01), Loechelt
patent: 2008/0265313 (2008-10-01), Loechelt et al.
patent: 2009/0014814 (2009-01-01), Loechelt et al.
patent: 2009/0096021 (2009-04-01), Loechelt et al.
N-Channel CICLON NexFET Power MOSFETs CSD16404Q5A Data Sheet, CICLON Semiconductor Device Corp., rev 2.7, 8 pages (2008).
N-Channel CICLON NexFET Power MOSFETs CSD16410Q5A Data Sheet, CICLON Semiconductor Device Corp., rev 1.0, 2 pages (2007).
Office Action mailed Apr. 2, 2010 in Related U.S. Appl. No. 12/337,234.
Declaration Under 37 C.F.R. §1.132 of Gary H. Loechelt, signed Jun. 15, 2010.

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