Methods of fabricating nonvolatile memory devices having...

Details Methods of fabricating nonvolatile memory devices having... Methods of fabricating nonvolatile memory devices having...

Filed on

2011-08-30

Date issued

2011-08-30

Examiner

Weiss, Howard (Department: 2814)

Patent Class

Semiconductor device manufacturing: process

SubClass

Making field effect device having pair of active regions...

SubSubClass

Having insulated gate

Other Related Categories

C438S264000, C438S524000, C257SE21423

Type

Reexamination Certificate

Status

active

Patent number

08008153

Description

ABSTRACT:
Nonvolatile memory devices are provided including an integrated circuit substrate and a charge storage pattern on the integrated circuit substrate. The charge storage pattern has a sidewall and a tunnel insulating layer is provided between the charge storage pattern and the integrated circuit substrate. A gate pattern is provided on the charge storage pattern. A blocking insulating layer is provided between the charge storage pattern and the gate pattern. The sidewall of the charge storage pattern includes a first nitrogen doped layer. Related methods of fabricating nonvolatile memory devices are also provided herein.

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