Semiconductor transistors with contact holes close to gates

Details Semiconductor transistors with contact holes close to gates Semiconductor transistors with contact holes close to gates

2011-07-26

2011-07-26

Vu, Hung (Department: 2811)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S233000, C438S299000

Reexamination Certificate

active

07985643

ABSTRACT:
A semiconductor structure. The structure includes (a) a semiconductor layer including a channel region disposed between first and second S/D regions; (b) a gate dielectric region on the channel region; (c) a gate region on the gate dielectric region and electrically insulated from the channel region by the gate dielectric region; (d) a protection umbrella region on the gate region, wherein the protection umbrella region comprises a first dielectric material, and wherein the gate region is completely in a shadow of the protection umbrella region; and (e) a filled contact hole (i) directly above and electrically connected to the second S/D region and (ii) aligned with an edge of the protection umbrella region, wherein the contact hole is physically isolated from the gate region by an inter-level dielectric (ILD) layer which comprises a second dielectric material different from the first dielectric material.

REFERENCES:
patent: 5897349 (1999-04-01), Agnello
patent: 6136696 (2000-10-01), Horiba
patent: 6174756 (2001-01-01), Gambino et al.
patent: 6215190 (2001-04-01), Bruce et al.
patent: 6232647 (2001-05-01), Lien et al.
patent: 6274467 (2001-08-01), Gambino et al.
patent: 6346734 (2002-02-01), Divakaruni et al.
patent: 6350661 (2002-02-01), Lim et al.
patent: 6372569 (2002-04-01), Lee et al.
patent: 6432787 (2002-08-01), Mandelman et al.
patent: 6501131 (2002-12-01), Divakaruni et al.
patent: 6538295 (2003-03-01), Bronner et al.
patent: 6638805 (2003-10-01), Park et al.
patent: 6884715 (2005-04-01), Kwon et al.
patent: 7381610 (2008-06-01), Furukawa et al.
patent: 2001/0054729 (2001-12-01), Divakaruni et al.
patent: 2003/0027395 (2003-02-01), Park et al.
patent: PUPA S60-176947 (1985-09-01), None
patent: PUPA H07-094731 (1995-04-01), None
patent: PUPA H11-087695 (1999-03-01), None
patent: PUPA H11-284072 (1999-10-01), None
patent: 2001209542 (2001-03-01), None
patent: PUPA 2002-110790 (2002-04-01), None
patent: 2003023117 (2003-01-01), None
patent: 2001267281 (2003-03-01), None
patent: 2003077936 (2003-03-01), None

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