Strained channel transistor formation

Details Strained channel transistor formation Strained channel transistor formation

2011-01-11

2011-01-11

Smith, Zandra (Department: 2895)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S303000, C438S305000, C438S514000, C438S530000, C438S671000, C438S683000, C438S700000, C438S938000

Reexamination Certificate

active

07867860

ABSTRACT:
A strained channel transistor is provided. The strained channel transistor comprises a substrate formed of a first material. A source region comprised of a second material is formed in a first recess in the substrate, and a drain region comprised of the second material is formed in a second recess in the substrate. A strained channel region formed of the first material is intermediate the source and drain region. A gate stack formed over the channel region includes a gate electrode overlying a gate dielectric. A gate spacer formed along a sidewall of the gate electrode overlies a portion of at least one of said source region and said drain region. A cap layer may be formed over the second material, and the source and drain regions may be silicided.

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