Mixed lithography with dual resist and a single pattern...

Radiation imagery chemistry: process – composition – or product th – Imaging affecting physical property of radiation sensitive... – Electron beam imaging

Reexamination Certificate

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C430S302000, C430S310000, C430S312000, C430S313000, C430S314000, C430S317000, C430S942000

Reexamination Certificate

active

07914970

ABSTRACT:
An inorganic electron beam sensitive oxide layer is formed on a carbon based material layer or an underlying layer. The inorganic electron beam sensitive oxide layer is exposed with an electron beam and developed to form patterned oxide regions. An ultraviolet sensitive photoresist layer is applied over the patterned oxide regions and exposed surfaces of the carbon based material layer, and subsequently exposed with an ultraviolet radiation and developed. The combined pattern of the patterned ultraviolet sensitive photoresist and the patterned oxide regions is transferred into the carbon based material layer, and subsequently into the underlying layer to form trenches. The carbon based material layer serves as a robust mask for performing additional pattern transfer into the underlying layer, and may be easily stripped afterwards. The patterned ultraviolet sensitive photoresist, the patterned oxide regions, and the patterned carbon based material layer are subsequently removed.

REFERENCES:
patent: 6794230 (2004-09-01), Huang et al.
Gourgon, C., et al., “Influence of pattern density in nanoimprint lithography”, 2003 American Vacuum Society, J. Vac. Sci. Technol. B 21(1), Jan./Feb. 2003, pp. 98-105.
Grigorescu, A.E., et al., “Sub-10 nm linewidth in HSQ, using Electron Beam Lithography”, MINE '06 Micro- and Nano- Engineering, P-EIBL07, Electron and Ion Beam Lithography.
Wenchuang, (Walter) Hu, et al., “Sub-10nm electron beam lithography using cold development of poly (methylmethacrylate)”, 2004 American Vacuum Society, J. Vac. Sci. Technol. B 22(4), Jul./Aug. 2004, pp. 1711-1716.

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