Method of fabricating semiconductor device

Details Method of fabricating semiconductor device Method of fabricating semiconductor device

2011-05-24

2011-05-24

Coleman, W. David (Department: 2823)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C257SE21428

Reexamination Certificate

active

07947559

ABSTRACT:
Provided is a method of fabricating a semiconductor device having an impurity region with an impurity concentration of a first dose in a substrate. In the method, first impurity ions of a first conductivity type are implanted into the substrate, and a rapid thermal processing (RTP) is performed on the substrate to activate the first impurity ions. Second impurity ions of the first conductivity type are implanted into the substrate having the activated first impurity ions.

REFERENCES:
patent: 5759901 (1998-06-01), Loh et al.
patent: 6297111 (2001-10-01), Krivokapic
patent: 6300206 (2001-10-01), Fukada et al.
patent: 7135393 (2006-11-01), Tagawa
patent: 2002/0139992 (2002-10-01), Kumar et al.
patent: 10-1998-0057854 (1998-09-01), None
patent: 10-2000-044662 (2000-07-01), None
Fiory et al., “Transient-Enhanced Diffusion in Shallow Junction Formation,” Departmetn of Physics, New Jersey Institute of Technology, Newark, NJ, (2002).
Xia et al., “Studies of Boron Segregation to {311} Defects in Silicon-Implanted Silicon,” Jpn. J. Appl. Phys., 38(4B):2319-2323 (1999).

Affiliated with

Also associated with

Rating

Method of fabricating semiconductor device does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of fabricating semiconductor device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of fabricating semiconductor device will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-2675297