Method of forming a germanium silicide layer, semiconductor...

Details Method of forming a germanium silicide layer, semiconductor... Method of forming a germanium silicide layer, semiconductor...

2011-01-04

2011-01-04

Le, Dung A. (Department: 2818)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S483000, C438S590000, C438S508000, C438S508000

Reexamination Certificate

active

07863142

ABSTRACT:
Example embodiments relate to a method of forming a germanium (Ge) silicide layer, a semiconductor device including the Ge silicide layer, and a method of manufacturing the semiconductor device. A method of forming a Ge silicide layer according to example embodiments may include forming a metal layer including vanadium (V) on a silicon germanium (SiGe) layer. The metal layer may have a multiple-layer structure and may further include at least one of platinum (Pt) and nickel (Ni). The metal layer may be annealed to form the germanium silicide layer. The annealing may be performed using a laser spike annealing (LSA) method.

REFERENCES:
patent: 6797614 (2004-09-01), Paton et al.
patent: 7432559 (2008-10-01), Lai et al.
patent: 7449782 (2008-11-01), Cabral et al.
patent: 2008/0132019 (2008-06-01), Ku et al.
patent: 2009/0108378 (2009-04-01), Zhu et al.

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