Coating processes – Direct application of electrical – magnetic – wave – or... – Plasma
Reexamination Certificate
2011-06-14
2011-06-14
Meeks, Timothy H (Department: 1715)
Coating processes
Direct application of electrical, magnetic, wave, or...
Plasma
C438S597000, C438S648000
Reexamination Certificate
active
07959985
ABSTRACT:
A method for forming a modified TaC or TaCN film that may be utilized as a barrier film for Cu metallization. The method includes disposing a substrate in a process chamber of a plasma enhanced atomic layer deposition (PEALD) system configured to perform a PEALD process, depositing a TaC or TaCN film on the substrate using the PEALD process, and modifying the deposited TaC or TaCN film by exposing the deposited TaC or TaCN film to plasma excited hydrogen or atomic hydrogen or a combination thereof in order to remove carbon from at least the plasma exposed portion of the deposited TaCN film. The method further includes forming a metal film on the modified TaCN film, where the modified TaCN film provides stronger adhesion to the metal film than the deposited TaCN film. According to one embodiment, a TaCN film is deposited from alternating exposures of TAIMATA and plasma excited hydrogen.
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Faguet Jacques
Hara Masamichi
Ishizaka Tadahiro
Matsuda Tsukasa
Mizusawa Yasushi
Meeks Timothy H
Miller, Jr. Joseph
Oblon, Spivak McClelland, Maier & Neustadt, L.L.P.
Tokyo Electron Limited
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