Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2011-03-01
2011-03-01
Chaudhari, Chandra (Department: 2891)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C438S437000, C257SE21655
Reexamination Certificate
active
07897460
ABSTRACT:
The invention includes methods of forming recessed access devices. A substrate is provided to have recessed access device trenches therein. A pair of the recessed access device trenches are adjacent one another. Electrically conductive material is formed within the recessed access device trenches, and source/drain regions are formed proximate the electrically conductive material. The electrically conductive material and source/drain regions together are incorporated into a pair of adjacent recessed access devices. After the recessed access device trenches are formed within the substrate, an isolation region trench is formed between the adjacent recessed access devices and filled with electrically insulative material to form a trenched isolation region.
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Mathew Suraj
Parekh Kunal R.
Tang Sanh D.
Trivedi Jigish D.
Zahurak John K.
Chaudhari Chandra
Micro)n Technology, Inc.
Wells St. John P.S.
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