Interconnect structure

Details Interconnect structure Interconnect structure

2011-04-19

2011-04-19

Williams, Alexander O (Department: 2826)

Active solid-state devices (e.g., transistors, solid-state diode

Combined with electrical contact or lead

Of specified material other than unalloyed aluminum

C257SE23145, C257SE23160, C257SE23167, C257S762000, C257S680000, C257S773000, C257S774000

Reexamination Certificate

active

07928570

ABSTRACT:
An interconnect structure is disclosed. In one embodiment, the interconnect structure includes: a substrate including a first liner layer and a first metal layer thereover; a dielectric barrier layer over the first metal layer and the substrate; an inter-level dielectric layer over the dielectric barrier layer; a via extending between the inter-level dielectric layer, the dielectric barrier layer, and the first metal layer, the via including a second liner layer and a second metal layer thereover; and a diffusion barrier layer located between the second liner layer and the first metal layer, wherein a portion of the diffusion barrier layer is located under the dielectric barrier layer.

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