Method of forming a local interconnect between electronic device

Details Method of forming a local interconnect between electronic device Method of forming a local interconnect between electronic device

1997-03-14

1999-08-31

Everhart, Caridad

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

438683, 438705, H01L 2144

Patent

active

059465956

ABSTRACT:
Disclosed is a method for forming a local interconnect with a self-aligned titanium silicide process on a semiconductor substrate. The initial step of the method is to form a thin titanium layer over the electronic devices to be provided with electrical communication. A polysilicon layer is then formed over the thin titanium layer, and in a further step, an implant mask is formed over portions of the polysilicon layer so as to pattern an area where the local interconnect is desired to be formed. Ions are then implanted into the polysilicon layer exposed by the implant mask, and the implant mask is then removed. In a further step, an etch process that etches either implanted or unimplanted polysilicon and is selective to the other is conducted. The remaining implanted polysilicon and titanium layers are then annealed to form titanium silicide, and the titanium that is not converted to titanium silicide is removed.

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