Methods of fabricating ferroelectric capacitors

Details Methods of fabricating ferroelectric capacitors Methods of fabricating ferroelectric capacitors

1996-12-03

1998-12-01

Bowers, Jr., Charles L.

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

438 3, 438254, 438397, H01L 2120, H01L 218242

Patent

active

058438181

ABSTRACT:
Methods of producing ferroelectric capacitors where the electrodes are formed in a contact hole. These methods include the steps of forming an insulating layer on an integrated circuit substrate. A contact hole is then formed through the insulating layer layer to expose a region of the integrated circuit substrate and to define a storage node pattern. A layer of oxidation-resistant conductive material is formed in the contact hole and the insulating layer removed to define a first storage electrode by exposing the layer of oxidation-resistant conductive material. A ferroelectric layer is then formed on the first storage electrode and a second storage electrode is formed on the ferroelectric layer opposite the first storage electrode.

REFERENCES:
patent: 5046043 (1991-09-01), Miller et al.
patent: 5099305 (1992-03-01), Takenaka
patent: 5270241 (1993-12-01), Dennison et al.
patent: 5346844 (1994-09-01), Cho et al.
patent: 5392189 (1995-02-01), Fazan et al.
patent: 5488011 (1996-01-01), Figura et al.
patent: 5489548 (1996-02-01), Nishioka et al.
patent: 5506166 (1996-04-01), Sandhu et al.
patent: 5668038 (1997-09-01), Huang et al.
Nishikawa, Kazuyasu, et al., Etching of patinum and high dielectric constant films, Japanese Applied Physics, vol. 63, No. 11 (1994), pp. 1139-1142.

Affiliated with

Also associated with

Rating

Methods of fabricating ferroelectric capacitors does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Methods of fabricating ferroelectric capacitors, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Methods of fabricating ferroelectric capacitors will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-2395311