Method of fabricating a barrier layer

Details Method of fabricating a barrier layer Method of fabricating a barrier layer

1998-04-13

1999-12-28

Whitehead, Jr., Carl

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

438528, 438624, 438627, 438653, H01L 214763

Patent

active

06008118&

ABSTRACT:
A method of forming a barrier layer is disclosed. The barrier layer is formed on the upper surface of the tungsten plug. The method of forming the barrier layer is mainly a nitridation reaction. The nitridation reaction makes use of NH.sub.3 plasma, N.sub.2 plasma and N.sup.+ implantation.

REFERENCES:
patent: 5354712 (1994-10-01), Ho et al.
patent: 5633200 (1997-05-01), Hu
patent: 5780908 (1998-07-01), Sekiguchi et al.
patent: 5817572 (1998-10-01), Chiang et al.
patent: 5824599 (1998-10-01), Schacham-Diamand et al.
patent: 5910020 (1999-06-01), Yamada

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