Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Patent
1998-03-12
1999-12-28
Tsai, Jey
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
438398, H01L 218242
Patent
active
060080868
ABSTRACT:
Uniformity of thin deposited layers on textured surfaces is enhanced by reducing the total surface area available to film deposition. The backside surface area of a semiconductor wafer is reduced prior to film deposition, thereby reducing the available surface to deposition when a deposition process is supply-limited. Reducing the backside surface area suppresses nonuniformities in thin film deposition when the deposition process is substantially supply-limited. The present invention is advantageous for improving uniformity of nitride capacitor dielectric layers deposited on textured electrodes.
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Fazan Pierre C.
Schuegraf Klaus F.
Micro)n Technology, Inc.
Tsai Jey
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