Method to form high density NAND structure nonvolatile memories

Details Method to form high density NAND structure nonvolatile memories Method to form high density NAND structure nonvolatile memories

1998-01-05

1999-12-28

Booth, Richard

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

438264, H01L 218247

Patent

active

060080876

ABSTRACT:
The present invention includes forming a pad oxide layer on a substrate. A silicon nitride layer is deposited on the pad oxide. Then, an etching process is used to etch the silicon nitride layer, pad oxide. Subsequently, a silicon oxynitride layer is formed on the substrate. An undoped polysilicon layer is deposited on the silicon nitride layer and silicon oxynitride layer. Subsequently, polysilicon side wall spacers are formed. Then, the silicon nitride layer is removed to expose the pad oxide. Then, a blanket ion implantation is carried out to implant dopant into the side wall spacers, and through the pad oxide or the silicon oxynitride layer into the substrate. An oxide layer is deposited on the polysilicon side wall spacers. Then, a chemical mechanical polishing (CMP) is performed for planarization. A further silicon oxynitride layer is grown at the top of the polysilicon side wall spacers. Next, a doped polysilicon layer is formed on the oxide, polysilicon side wall spacers as word line.

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patent: 5330924 (1994-07-01), Huang et al.
patent: 5397726 (1995-03-01), Bergemont
patent: 5427968 (1995-06-01), Hong
patent: 5635415 (1997-06-01), Hong
patent: 5770501 (1998-06-01), Hong
patent: 5856224 (1999-01-01), Sheu

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