Method to enhance deuterium anneal/implant to reduce channel-hot

Details Method to enhance deuterium anneal/implant to reduce channel-hot Method to enhance deuterium anneal/implant to reduce channel-hot

1998-07-28

2000-01-25

Whitehead, Jr., Carl

Semiconductor device manufacturing: process

Gettering of substrate

By implanting or irradiating

438 38, 438509, 438522, H01L 21265

Patent

active

06017806&

ABSTRACT:
A method of fabricating a semiconductor device wherein there is provided a partially fabricated semiconductor device having a Si/SiO.sub.2 interface in which all processing steps involving heating of the device to a temperature above the Si-hydrogen dissociation temperature for a sufficient time to cause at least substantial dissociation of hydrogen from silicon have been completed. The device is immersed in a deuterium ambient for a sufficient time to permit the device structure in the region of the Si/SiO.sub.2 interface to have an excess of deuterium atoms. The device is then heated to a temperature above the dissociation temperature of hydrogen-silicon bonds for a time sufficient to cause substantial dissociation of hydrogen and/or deuterium from Si in the region of the Si/SiO.sub.2 interface while the deuterium remains in the device structure at the Si and SiO.sub.2 interface. The temperature of the device is then lowered to below the hydrogen-silicon dissociation temperature; and fabrication of the device is completed in standard manner. The SiO.sub.2 is generally the gate oxide of an MOS transistor. The step of immersing is at a temperature of from about 400 degrees C. to about 450 degrees C. for at least 60 minutes. The step of heating is at a temperature of from about 500 to about 550 degrees C. for a period of from about 15 to about 30 minutes. The step of lowering the temperature is to ambient temperature of about 22 degrees C.

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