Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Patent
1997-10-20
2000-06-06
Picardat, Kevin M.
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
438710, 438906, H01L 2144
Patent
active
060718137
ABSTRACT:
A system and method for providing electrical connection to a copper interconnect through a via hole is disclosed. The copper interconnect includes a surface having impurities. The method and system include chemically reducing the copper oxide and removing the carbon atoms at the surface. The chemical etching is performed using a reactive species. The reactive species reacts with the impurities on the surface of the copper interconnect to remove the impurities.
REFERENCES:
patent: 5395650 (1995-03-01), Holl et al.
Advanced Micro Devices , Inc.
Picardat Kevin M.
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