Method of making a semiconductor device comprising copper interc

Details Method of making a semiconductor device comprising copper interc Method of making a semiconductor device comprising copper interc

2000-01-05

2000-11-14

Smith, Matthew

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

438633, 438798, 438788, 438792, H01L 214763

Patent

active

061469882

ABSTRACT:
Cu diffusion between Cu and Cu alloy interconnect members, e.g., lines, in a silicon oxide inter-layer dielectric is avoided or substantially reduced by converting an upper portion of the silicon oxide inter-layer dielectric between neighboring lines to silicon oxynitride and then depositing a capping layer. Embodiments include filling damascene trenches in a silicon oxide inter-layer dielectric with Cu or a Cu alloy, CMP to effect planarization such that the upper surfaces of the lines are substantially coplanar with the upper surface of the inter-layer dielectric and treating the exposed surfaces with a high strength ammonia plasma to ion bombard the exposed inter line silicon oxide with nitrogen atoms, thereby converting the upper portion to silicon oxynitride, while simultaneously removing or substantially reducing surface oxides on the lines. A silicon nitride capping layer is then deposited.

REFERENCES:
patent: 4789648 (1988-12-01), Chow et al.
patent: 5011782 (1991-04-01), Lamb et al.
patent: 5334554 (1994-08-01), Lin et al.
patent: 5447887 (1995-09-01), Filipiak et al.
patent: 5635425 (1997-06-01), Chen
patent: 5693563 (1997-12-01), Teong
patent: 5902122 (1999-05-01), Sheen et al.
patent: 5994200 (1999-11-01), Kim
patent: 6048764 (2000-04-01), Suzuki et al.
Passivation of copper by silicide formation in dilute silane--S. Hymes and S. P. Murarka, Rensselaer Polytechnic Institute Troy, New York 12180--C. Shepard and W. A. Lanford, State University of New York, Albany, New York 12222--Received Jul. 29, 1991: (accepted for publication Jan. 25, 1992) pp. 4623-4625.

Affiliated with

Also associated with

Rating

Method of making a semiconductor device comprising copper interc does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of making a semiconductor device comprising copper interc, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of making a semiconductor device comprising copper interc will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-2064902