Semiconductor memory device having redundancy function

Details Semiconductor memory device having redundancy function Semiconductor memory device having redundancy function

1998-04-08

1999-10-19

Dinh, Son T.

Static information storage and retrieval

Read/write circuit

Bad bit

3652257, 36523003, 36523006, G11C 700

Patent

active

059700025

ABSTRACT:
A high-density semiconductor memory device may be provided with redundant memory, so that it is capable of repairing defects generated in a normal memory cell array by using a spare memory cell array which has a plurality of sub memory cell arrays, split word line driver blocks and sense amps. The spare memory cell array includes a plurality of unit spare mats, each having a given number of the sub memory cell arrays, split word line driver blocks, spare sense amps, and a corresponding spare column decoder. The spare memory cell array further includes a plurality of spare row decoders. A control unit is provided for controlling the split word line driver blocks included in each of the unit spare mats in response to given address signals.

REFERENCES:
patent: 4914632 (1990-04-01), Fujishima et al.
patent: 5343429 (1994-08-01), Nakayama et al.
patent: 5373471 (1994-12-01), Saeki et al.
patent: 5652725 (1997-07-01), Suma et al.

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