Method for forming capacitor of semiconductor device using pre-b

Details Method for forming capacitor of semiconductor device using pre-b Method for forming capacitor of semiconductor device using pre-b

1998-09-04

2000-11-14

Dutton, Brian

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

438 3, 438238, 438257, H01L 218242, H01L 2100, H01L 218234, H01L 21336

Patent

active

061469351

ABSTRACT:
A method for forming a capacitor of a semiconductor device. A lower electrode is prebaked before a dielectric layer is formed on the lower electrode. As a result, moisture or contaminants are removed from the lower electrode, increasing adhesion between the lower electrode and the dielectric layer formed on the lower electrode, thereby preventing the dielectric layer from being lifted and cracked due to inferior coating properties.

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