Method of improving beta ratio in SRAM and device manufactured t

Details Method of improving beta ratio in SRAM and device manufactured t Method of improving beta ratio in SRAM and device manufactured t

1997-10-27

1999-02-16

Chaudhari, Chandra

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

438217, 438384, H01L 218244

Patent

active

058720308

ABSTRACT:
A method of forming an SRAM transistor cell on a doped semiconductor substrate with a halo region in transistors thereof by the steps including well formation, field isolation formation, threshold voltage implant, gate oxidation; deposition of polysilicon and patterning thereof into gate electrode; post etching anneal; N type LDD photolithography and ion implanting NMOS transistor devices; ion implant halo regions in a transistor; P type LDD photolithography and ion implanting PMOS transistor devices; spacer formation; N+ source/drain photolithography and ion implanting; and P+ source/drain photolithography and ion implanting.

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