Methods for forming ferroelectric films using dual deposition st

Details Methods for forming ferroelectric films using dual deposition st Methods for forming ferroelectric films using dual deposition st

1997-04-16

2000-10-03

Chaudhari, Chandra

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

438 3, H01L 218242

Patent

active

061272183

ABSTRACT:
A method for forming a ferroelectric film on an integrated circuit substrate includes dual deposition steps. In particular, a first portion of the ferroelectric film is formed on the integrated circuit substrate using a source gas and a first oxidant for a first predetermined period of time. A second portion of the ferroelectric film is then formed on the first portion opposite the substrate using the source gas and a second oxidant for a second predetermined period of time wherein the second oxidant is different from the first oxidant. In particular, the second oxidant can include a mixture of the first oxidant and another oxidant gas.

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