Semiconductor device manufacturing: process – Chemical etching – Vapor phase etching
Patent
1998-05-12
2000-05-23
Utech, Benjamin L.
Semiconductor device manufacturing: process
Chemical etching
Vapor phase etching
438710, 438714, 438726, 438728, 438732, H01L 213065
Patent
active
060665688
ABSTRACT:
An electron density at an ECR point, which is spaced from a substrate to be treated and which faces the substrate, is set to be higher than or equal to 0.46 nc (nc: an upper limit side cut-off density of an X wave) and lower than nc. Thus, a high chevron distribution of electron density is formed in end portions of a magnetic field forming region, and a distribution of electron density having a lower peak value than those in the end portions is formed in a central portion of the magnetic field forming region. In this case, the periphery of a magnetic field crosses the inner wall of a vacuum chamber once between the ECR point and the substrate, and a space of one fourth or more of the wavelength of the X wave is formed between the periphery of the magnetic field and the inner wall of the vacuum chamber as the magnetic field runs downstream. Thus, it is possible to achieve an inplane uniform treatment when carrying out a treatment, such as a thin film deposition or etching, with ECR plasmas for a wafer.
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Amano Hideaki
Ishii Nobuo
Kawai Yoshinobu
Kawakami Satoru
Ueda Yoko
Tokyo Electron Limited
Tran Binh X.
Utech Benjamin L.
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