Method for fabricating protected copper metallization

Details Method for fabricating protected copper metallization Method for fabricating protected copper metallization

1998-12-09

2000-05-23

Bowers, Charles

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

438643, 438672, 438675, 438678, 438687, H01L 214763, H01L 2144

Patent

active

060665572

ABSTRACT:
Reliable copper or copper alloy interconnection patterns are formed by forming a protective barrier layer lining a via or contact hole exposing an underlying conductive feature. Embodiments include forming a barrier layer on the insulating layer lining the side surfaces and on the exposed nitride layer before exposing a portion of the underlying conductive feature. The barrier layer prevents copper from depositing on the sidewalls of the dielectric interlayer and diffusing through the ILD.

REFERENCES:
patent: 5284801 (1994-02-01), Page
patent: 5674787 (1997-10-01), Zhao
patent: 5686354 (1997-11-01), Avanzino
patent: 5693563 (1997-12-01), Teong
patent: 5891513 (1999-04-01), Dubin

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