Method of increasing the area of a buried contact region

Details Method of increasing the area of a buried contact region Method of increasing the area of a buried contact region

1997-09-19

1999-05-18

Niebling, John F.

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

438533, 438655, 438657, 438305, H01L21/336

Patent

active

059045310

ABSTRACT:
A process for forming an increased surface area, buried contact region, for a MOSFET device, has been developed. The process features creating a mini-trench, in an insulator filled shallow trench, exposing a vertical surface of the semiconductor substrate, along the side of the mini-trench. An angled, phosphorous, ion implantation procedure, creates a buried contact region along a top surface, as well as along the vertical surface of the semiconductor substrate, exposed in the mini-trench.

REFERENCES:
patent: 5014099 (1991-05-01), McElroy
patent: 5521113 (1996-05-01), Hsue et al.
patent: 5525552 (1996-06-01), Huang
patent: 5607881 (1997-03-01), Huang
patent: 5843816 (1997-07-01), Liaw et al.

Affiliated with

Also associated with

Rating

Method of increasing the area of a buried contact region does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of increasing the area of a buried contact region, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of increasing the area of a buried contact region will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1755724