Method for making a piezoresistive pressure sensor of semiconduc

Details Method for making a piezoresistive pressure sensor of semiconduc Method for making a piezoresistive pressure sensor of semiconduc

1996-01-24

1997-05-20

Trinh, Michael

Semiconductor device manufacturing: process

Making device or circuit responsive to nonelectrical signal

Physical stress responsive

438977, H01L 2177

Patent

active

056311982

ABSTRACT:
A semiconductor device comprises a piezoresistive pressure sensor (12), which has a membrane (14), which is constituted by a conducting epitaxy layer (16), which is applied to a conducting semiconductor substrate (18) of the opposite conductivity. On the outer surface (20) of the membrane facing away from the semiconductor substrate (18) at least one piezoresistor (22) is incorporated. Between the semiconductor substrate (18) and the epitaxy layer (16) an annularly structured intermediate layer (28) is incorporated, which defines a region (26'), adjoining the inner surface (24) of the membrane, of an opening (26) extending through the semiconductor substrate (18). This opening (26) is produced by anisotropic semiconductor etching, the intermediate layer (28) having a conductivity which is opposite to that of the semiconductor substrate so that this intermediate layer (28) functions as an etch stopping means and is not attacked by the etchant.

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patent: 5110373 (1992-05-01), Mauger
patent: 5296730 (1994-03-01), Takano et al.
patent: 5514898 (1996-05-01), Hartauer

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